半导体学报

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半导体学报 关注(): 期刊周期：月刊; 期刊级别：学报; 国内统一刊号：11-5781/TN; 国际标准刊号：1674-4926; 主办单位：中国科学院半导体研究所;中国电子学会; 主管单位：中国科学院; 上一本期杂志：《经济地理》杂志社; 下一本期杂志：《中国个体防护装备》科技类杂志

　搜论文知识网为客户提供省级以上期刊发表的相关信息以及相关渠道的中介服务。本站并非《半导体学报》杂志的官方网站，与《半导体学报》等同类优秀期刊杂志保持密切的合作关系，负责合作期刊的推荐、征稿、信息整理收录等工作。网站本着用心为客户服务的原则，根据客户的不同需要及稿件特点，可以在数千家期刊中，推荐最适合您的论文发表的正规期刊，帮助客户节约时间和成本，提高论文发表的成功率。

　　期刊简介：《半导体学报》是中国电子学会和中国科学院半导体研究所主办的学术刊物。它报道半导体物理学、半导体科学技术和相关科学技术领域内最新的科研成果和技术进展，内容包括半导体超晶格和微结构物理，半导体材料物理，包括量子点和量子线等材料在内的新型半导体材料的生长及性质测试，半导体器件物理，新型半导体器件，集成电路的CAD设计和研制，新工艺，半导体光电子器件和光电集成，与半导体器件相关的薄膜生长工艺，性质和应用等等。本刊与物理类期刊和电子类期刊不同，是以半导体和相关材料为中心的，从物理，材料，器件到应用的，从研究到技术开发的，跨越物理和信息两个学科的综合性学术刊物。《半导体学报》发表中、英文稿件。《半导体学报》被世界四大检索系统（美国工程索引(EI)，化学文摘(CA)，英国科学文摘(SA)，俄罗斯文摘杂志(РЖ)）收录。
《半导体学报》1980年创刊。现为月刊，每期190页左右，国内外公开发行。每期均有英文目次，每篇中文论文均有英文摘要。《半导体学报》主编为王守武院士。主要读者对象是从事半导体科学研究、技术开发、生产及相关学科的科技人员、管理人员和大专院校的师生。

　　期刊栏目：研究快报、研究论文、研究简报、技术进展等。

　　期刊收录：

　　国家新闻出版总署收录
90年获中科院优秀期刊二等奖
92年获国家科委、中共中央宣传部和国家新闻出版署全国优秀期刊评比三等奖
97年国家科委、中共中央中宣传部和国家新出版署三等奖
中国期刊方阵“双效”期刊
国外数据库收录：俄罗斯文摘杂志、美国化学文摘、英国物理学、电技术、计算机及控制信息社数据库

　　半导体学报最新期刊目录

A cryogenic 3.3-V supply, 1.6% 3σ-accuracy all-CMOS voltage reference with 58-dB PSR@10 kHz in 0.18-μm CMOS

摘要：This brief presents a cryogenic voltage reference circuit designed to operate effectively across a wide temperature range from 30 to 300 K. A key feature of the proposed design is utilizing a current ...

Effect of grain size on the resistivity of polycrystalline 3C-SiC

摘要：Silicon carbide offers distinct advantages in the field of power electronic devices. However, manufacturing processes remain a significant barrier to its widespread adoption. Polycrystalline SiC is le...

Investigating the doping performance of an ionic dopant for organic semiconductors and thermoelectric applications

摘要：Doping plays a pivotal role in enhancing the performance of organic semiconductors（OSCs） for advanced optoelectronic and thermoelectric applications. In this study, we systematically investigated the ...

A RISC-V 32-bit microprocessor on two-dimensional semiconductor platform

摘要：<正>With the rapid development of information technology,the demand for high-performance and low-power microprocessors continues to grow. Traditional silicon-based semiconductor technologies have...

Topological materials-based photodetectors from the infrared to terahertz range

摘要：Infrared and terahertz waves constitute pivotal bands within the electromagnetic spectrum, distinguished by their robust penetration capabilities and non-ionizing nature. These wavebands offer the pot...

A 0.1-5.1 GHz high-gain LNA with inductorless composite resistor-capacitor feedback structure based on a 0.25 μm SiGe BiCMOS process

摘要：In this paper, a high-gain inductorless LNA（low-noise amplifier） compatible with multiple communication protocols from 0.1 to 5.1 GHz is proposed. A composite resistor-capacitor feedback structure is ...

Downscaling challenges in IGZO transistors: A study on threshold voltage roll-up and roll-off effects

摘要：Besides the common short-channel effect（SCE） of threshold voltage(V_th) roll-off during the channel length（L） downscaling of In GaZnO（IGZO） thin-film transistors（TFTs）, an opposite V_th<...

A semiconductor radiation dosimeter fabricated in 8-inch process

摘要：The radiation-sensitive field effect transistors(RADFET) radiation dosimeter is a type of radiation detector based on the total dose effects of the p-channel metal-oxide-semiconductor(PMOS) transistor...

4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate

摘要：A 4H-SiC superjunction（SJ） MOSFET（SJMOS） with integrated high-K gate dielectric and split gate（HKSG-SJMOS） is proposed in this paper. The key features of HKSG-SJMOS involve the utilization of high-K（H...

Band alignment of SnO/β-Ga₂O₃ heterojunction and its electrical properties for power device application

摘要：In this study, we present the fabrication of vertical SnO/β-Ga₂O₃ heterojunction diode（HJD） via radio frequency（RF）reactive magnetron sputtering. The valence and conduction band ...

Multi-chip multi-phase DC-DC converters for AI power: a ring,a chain,or a net,independent or master-slave?

摘要：<正>Motivation. As artificial intelligence（AI） workloads escalate exponentially, ultra-thin, high-efficiency voltage regulator modules（VRMs） with exceptional power density become essential for ba...

Trends and emerging techniques in isolated power converters

摘要：<正>Isolated power converters have emerged as an active research topic in power integrated circuit(IC) design. Reflecting this growing interest, ISSCC 2025 has featured a dedicated session on "Is...

Broadband photoluminescence and nonlinear chiroptical properties in chiral 2D halide perovskites

摘要：Two-dimensional（2D） chiral halide perovskites（CHPs） have attracted broad interest due to their distinct spin-dependent properties and promising applications in chiroptics and spintronics. Here, we rep...

Growth and optical properties of large-sized Co²⁺:ZnGa₂O₄ single crystal

摘要：The transition of cobalt ions located at tetrahedral sites will produce strong absorption in the visible and nearinfrared regions, and is expected to work in a passively Q-switched solid-state laser a...

Green perovskite CsPbBr₃ light-emitting electrochemical cells with distributed Si nanowires-based electrodes for flexible applications

摘要：The emergence of cesium lead halide perovskite materials stable at air opened new prospects for the optoelectronic industry. In this work we present an approach to fabricating a flexible green perovsk...

Progress and trends of low-jitter fractional-N PLL

摘要：<正>Fractional-N phase-locked loops （PLLs） are widely deployed in high-speed communication systems to generate local oscillator （LO） or clock signals with precise frequency. To support sophistica...

High-precision ADC design techniques in ISSCC 2025

摘要：<正>High-precision analog-to-digital converters(ADCs) serve as fundamental components in modern electronic systems,bridging physical analog world and digital intelligence. They find ubiquitous ap...

Review on three-dimensional graphene: synthesis and joint photoelectric regulation in photodetectors

摘要：Graphene has garnered significant attention in photodetection due to its exceptional optical, electrical, mechanical,and thermal properties. However, the practical application of two-dimensional(2D) g...

Reconfigurable devices based on two-dimensional materials for logic and analog applications

摘要：In recent years, as the dimensions of the conventional semiconductor technology is approaching the physical limits,while the multifunction circuits are restricted by the relatively fixed characteristi...

A simple and effective carrier lifetime characterization for semiconductor thin films

摘要：Minority carrier lifetimes τ are a fundamental parameter in semiconductor devices, representing the average time it takes for excess minority carriers to recombine. This characteristic is crucial for ...

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